메뉴 건너뛰기




Volumn 34, Issue 6, 1987, Pages 1190-1195

Radiation response of mos capacitors containing fluorinated oxides

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0010232132     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1987.4337451     Document Type: Article
Times cited : (52)

References (17)
  • 1
    • 84939035116 scopus 로고
    • Effects of pre-oxidation HF rinse on thermal oxidation of Si
    • presented at the.IEEE-SISC, Ft. Lauderdale, Florida, December
    • Y. Wang and R. C. Barker,“Effects of pre-oxidation HF rinse on thermal oxidation of Si”, presented at the 1985 IEEE-SISC, Ft. Lauderdale, Florida, December, 1985.
    • (1985)
    • Wang, Y.1    Barker, R.C.2
  • 2
    • 0000703152 scopus 로고
    • Unusually low surface-recombination velocity on Silicon and Germanium surfaces
    • E. Yablonovitch, D. L. Allara, C. C. Chang, T. Gmitter, and T. B. Bright, “Unusually low surface-recombination velocity on Silicon and Germanium surfaces”, Phys. Rev. Lett., 57, 249 (1986).
    • (1986) Phys. Rev. Lett. , vol.57 , Issue.249
    • Yablonovitch, E.1    Allara, D.L.2    Chang, C.C.3    Gmitter, T.4    Bright, T.B.5
  • 3
    • 0001451172 scopus 로고
    • Surface chemistry of HF passivated silicon: X-ray ray Photoelectron and Ion Scattering Spectroscopy results
    • B. R. Weinberger, G. G. Peterson, T. C. Eschrich, and H. A. Krasinski, “Surface chemistry of HF passivated silicon: X-ray ray Photoelectron and Ion Scattering Spectroscopy results”, J. Appl. Phys., 60, 3232 (1986).
    • (1986) J.Appl. Phys. , vol.60 , Issue.3232
    • Weinberger, B.R.1    Peterson, G.G.2    Eschrich, T.C.3    Krasinski, H.A.4
  • 4
    • 0021578210 scopus 로고
    • Fluorine-enhanced enhanced thermal oxidation of silicon in the presence of NF3
    • M. Morita, T. Kubo, T. Ishihara, and M. Hirose, “Fluorine-enhanced enhanced thermal oxidation of silicon in the presence of NF3”, Appl. Phys. Lett., 45, 1312 (1984).
    • (1984) Appl. Phys. Lett. , vol.45 , Issue.1312
    • Morita, M.1    Kubo, T.2    Ishihara, T.3    Hirose, M.4
  • 6
    • 0021601862 scopus 로고
    • Dependence of X-ray generation of interface traps on gate metal induced interfacial stress in MOS structures
    • V. Zekeriya and T.–P. Ma, “Dependence of X-ray generation of interface traps on gate metal induced interfacial stress in MOS structures”, IEEE Trans. Nucl. Sci., NS-31, 1261 (1984).
    • (1984) IEEE Trans. Nucl.Sci., NS-31 , vol.1261
    • Zekeriya, V.1    Ma, T.P.2
  • 7
    • 0000656954 scopus 로고
    • Gate-width dependence of radiation-induced induced interface traps in Meta/SiO 2/Si devices
    • M. R. Chin and T.–P. Ma, “Gate-width dependence of radiation-induced induced interface traps in Meta/SiO 2 /Si devices”, Appl. Phys. Lett., 42, 883 (1983).
    • (1983) Appl. Phys. Lett. , vol.42 , Issue.883
    • Chin, M.R.1    Ma, T.P.2
  • 8
    • 0019242095 scopus 로고
    • A Framework for understanding radiation induced interface states in SiO 2 MOS structures
    • F. B. McLean, “A Framework for understanding radiation induced interface states in SiO 2 MOS structures”, IEEE Trans. Nucl. Sci., NS-27, 1651 (1980).
    • (1980) IEEE Trans. Nucl.Sci., NS-27 , vol.1651
    • McLean, F.B.1
  • 9
    • 0346840948 scopus 로고
    • Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO 2-on-Si structures
    • D. L. Griscom, “Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO 2 -on-Si structures”, J. Appl. Phys., 58, 2524 (1985).
    • (1985) J.Appl. Phys. , vol.58 , Issue.2524
    • Griscom, D.L.1
  • 11
    • 0000843947 scopus 로고
    • Two distinct interface trap peaks in radiation damaged Metal/SiO 2/Si structures
    • E. F. da Silva, Jr., Y. Nishioka, and T.–P. Ma, “Two distinct interface trap peaks in radiation damaged Metal/SiO2/Si structures”, Appl. Phys. Lett., 51, 270 (1987).
    • (1987) Appl. Phys. Lett. , vol.51 , Issue.270
    • da Silva, E.F.1    Nishioka, Y.2    Ma, T.P.3
  • 12
    • 0023576504 scopus 로고
    • Time-Dependent Evolution of Interface Traps in Hot Electron Damaged Metal/SiO2/Si Capacitors
    • Sept.
    • Y. Nishioka, E. F. da Silva, Jr., and T.–P. Ma, “Time-Dependent Evolution of Interface Traps in Hot Electron Damaged Metal/SiO2/Si Capacitors”, to appear in IEEE Electr. Dev. Lett., EDL-8, Sept. 1987.
    • (1987) IEEE Electr. Dev. Lett. , vol.EDL-8
    • Nishioka, Y.1    da Silva, E.F.2    Ma, T.P.3
  • 14
    • 21544465655 scopus 로고
    • The localization and crystallographic dependence of Si suboxide species at the SiO 2/Si interface
    • P. J. Grunthaner, M. H. Hecht, F. J. Grunthaner, and N. M. Johnson, “The localization and crystallographic dependence of Si suboxide species at the SiO 2 /Si interface”, J. Appl. Phys., 61, 629 (1987).
    • (1987) J.Appl. Phys. , vol.61 , Issue.629
    • Grunthaner, P.J.1    Hecht, M.H.2    Grunthaner, F.J.3    Johnson, N.M.4
  • 15
    • 0020205589 scopus 로고
    • A viscous flow model to explain the appearance of high density thermal SiO 2 at low oxidation temperatures
    • E. A. Irene, E. Tierney, and J. Angilello, “A viscous flow model to explain the appearance of high density thermal SiO 2 at low oxidation temperatures”, J. Electroc. Soc., 129 2594 (1982).
    • (1982) J. Electroc.Soc. , vol.129 , Issue.2594
    • Irene, E.A.1    Tierney, E.2    Angilello, J.3
  • 16
    • 0022162838 scopus 로고
    • A measurement of the effect of intrinsic film stress on the overall rate of thermal oxidation of Silicon
    • J. K. Srivastava and E. A. Irene, “A measurement of the effect of intrinsic film stress on the overall rate of thermal oxidation of Silicon”, J. Electroc. Soc., 132, 2815 (1985).
    • (1985) J. Electroc.Soc. , vol.132 , Issue.2815
    • Srivastava, J.K.1    Irene, E.A.2
  • 17
    • 0002820455 scopus 로고
    • Intrinsic SiO 2 film stress measurements on thermally oxidized Si
    • E. Kobeda and E. A. Irene, “Intrinsic SiO 2 film stress measurements on thermally oxidized Si”, J. Vac. Sci. Technol. B, 5, 15 (1987).
    • (1987) J. Vac. Sci. Technol B , vol.5 , Issue.15
    • Kobeda, E.1    Irene, E.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.