Hot-Electron Hardened Si-Gate MOSFET Utilizing F Implantation

IEEE Electron Device Letters

Volumn 10, Issue 4, 1989, Pages 141-143

  Nishioka, Yasushiro ^a   Ohyu, Kiyonori ^a   Ohji, Yuzuru ^a   Natuaki, Nobuyoshi ^a   Mukai, Kiichiro ^a   Ma, Tso Ping ^b  

^a HITACHI LTD   (Japan)

^b YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; OXIDES--ION IMPLANTATION;

CHANNEL-HOT-ELECTRON INJECTION; HOT ELECTRON HARDENING; LOW ENERGY F IMPLANTATION; SILICON-FLUORIDE BOND FORMATION; SILICON-GATE MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0000207692     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.31697     Document Type: Article

References (7)

1. C. Hu et al., “Hot-electron-induced MOSFET degradation—Model, monitor, improvement,” IEEE Trans. Electron Devices, vol. ED-32, p. 295, 1985.
2. E. F. da Silva, Jr., Y. Nishioka, and T. P. Ma, “Radiation response of MOS capacitors containing fluorinated oxides,” IEEE Trans. Nucl. Sci., vol. NS-34, p. 1190, 1987.
3. Y. Wang, Y. Nishioka, T.P. Ma, and R. C. Barker, “Radiation and hot-electron effects on Si0 2 /Si interfaces with oxides grown in 0 2 containing small amounts of trichloroethant,” Appl. Phys. Lett., vol. 52, p. 573, 1988.
4. Y. Nishioka, E. F. da Silva, Jr., Y. Wang, and T. P. Ma, “Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in Si0 2, ” IEEE Electron Device Lett., vol. 9, p. 38, 1988.
5. T. B. Hook and T. P. Ma, “Hot-electron induced interface traps in Metal/Si02/Si capacitors: The effects of gate-induced strain,” Appl. Phy. Lett., vol. 48, p. 1208, 1986.
6. E. Takeda et al., “An AsP (n + - n-) double diffused drain MOSFET for VLSIs,” IEEE Trans. Electron Devices, vol. ED-30, p. 652, 1983.
7. F. J. Grunthaner, P. J. Grunthaner, and J. Maserjian, “Radiation- induced defects in Si0 2 as determined by XPS,” IEEE Trans. Nucl. Sci., vol. NS-29, p. 1462, 1982.