The effect of fluorine implantation on the interface radiation hardness of Si-gate metal-oxide-semiconductor transistors

Journal of Applied Physics

Volumn 66, Issue 8, 1989, Pages 3909-3912

  Nishioka, Yasushiro ^a   Ohyu, Kiyonori ^a   Ohji, Yuzuru ^a   Natsuaki, Nobuyoshi ^a   Mukai, Kiichiro ^a   Ma, T P ^b  

^a HITACHI LTD   (Japan)

^b YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345992867     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.344012     Document Type: Article

References (0)