Improving hot-electron hardness of narrow channel MOSFETs by fluorine implantation

Solid State Electronics

Volumn 34, Issue 11, 1991, Pages 1197-1200

  Nishioka, Yasushiro ^a   Itoga, Toshihiko ^b   Ohyu, Kiyonori ^b   Ma, Tso Ping ^c  

^a SOUTHERN METHODIST UNIVERSITY   (United States)

^b HITACHI LTD   (Japan)

^c YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLUORINE--APPLICATIONS; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS; SEMICONDUCTOR MATERIALS--ION IMPLANTATION;

FLUORINE IMPLANTATION; HOT CARRIER RESISTANCE; HOT ELECTRON HARDNESS; INTERFACE TRAPS; NARROW CHANNEL MOSFET'S; OXIDE ELECTRON TRAPS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026258127     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(91)90057-6     Document Type: Article

References (10)

1. Measurement of Radiation-Induced Interface Traps Using MOSFETs
2. Correlating the Radiation Response of MOS Capacitors and Transistors