Dramatic Improvement of Hot-Electron-Induced Interface Degradation in MOS Structures Containing For CI in Si02

IEEE Electron Device Letters

Volumn 9, Issue 1, 1988, Pages 38-40

  Ma, Tso Ping ^a   Nishioka, Yasushiro ^a   Silva, Eronides F Da ^a   Wang, Yu ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE COMPOUNDS; FLUORINE COMPOUNDS; SOLID STATE DEVICES - METAL/INSULATOR BOUNDARIES;

FOWLER-NORDHEIM TUNNELED HOT ELECTRON SUPPRESSION; HOT-ELECTRON-INDUCED INTERFACE TRAPS; TRICHLORIETHANE (TCA);

SEMICONDUCTOR DEVICES, MOS;

EID: 0023857569     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.20406     Document Type: Article

References (10)

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3. Y. Nissan-Cohen, J. Shappir, and D. Frohman-Bentchkowsky, “Trap generation and occupation dynamics in SiO2 under charge injection stress,” J. Appl. Phys., vol. 60, p. 2024, 1986.
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8. E.F. da Silva, Jr., Y. Nishioka, and T.-P. Ma, “Radiation response of MOS capacitors containing fluorinated oxides,” IEEE Trans. Nucl. Sci., vol. NS-34, Dec. 1987.
9. Y. Nishioka, E.F. da Silva, Jr., and T.-P. Ma, “Time-dependent evolution of interface traps in hot-electron damaged metal/Si02/Si capacitors,” IEEE Electron Device Lett., vol. EDL-8, pp. 566–568, Dec. 1987.
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