The influence of fluorine on threshold voltage instabilities in p+ polysilicon gated p-channel MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1989, Pages 443-446

  Baker, Frank K ^a   Pfiester, James R ^a   Mele, Thomas C ^a   Tseng, Hsing Huang ^a   Tobin, Philip J ^a   Hayden, James D ^a   Gunderson, Craig D ^a   Parrillo, Louis C ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ELECTRONS; FLUORINE; SEMICONDUCTING SILICON--DOPING; SEMICONDUCTOR DEVICES, MOS;

BORON PENETRATION; ELECTRON TRAPPING; GATE OXIDES; P-CHANNEL MOSFET; POLYSILICON; SUBMICRON PMOS DEVICES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024920290     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)