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Applied Physics Letters

Volumn 59, Issue 27, 1991, Pages 3595-3597

Interface trap generation and electron trapping in fluorinated SiO 2

(4) Vishnubhotla, Lakshmanna a Ma, T P a Tseng, Hsing Huang b Tobin, Philip J b

a YALE UNIVERSITY (United States)

b MOTOROLA INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001095655 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.105643 Document Type: Article

Times cited : (25)

References (10)

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2
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- Nishioka, Y.¹ da Silva, E.² Wang, Y.³ Ma, T.P.⁴

3
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- Lo, C.Q.¹ Ting, W.² Kwong, D.L.³ Kuehne, J.⁴ Magee, C.W.⁵

4
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- (1989) IEEE Electron Device Lett. , vol.EDL-10 , pp. 141
- Nishioka, Y.¹ Ohyu, K.² Ohji, Y.³ Natuaki, N.⁴ Mukai, K.⁵ Ma, T.P.⁶

5
- 0025208484
- (1990) IEEE Electron Device Lett. , vol.EDL-11 , pp. 3
- MacWilliams, K.¹ Halle, L.² Zietlow, T.³

6
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- 1989
- (1989) IEDM Tech. Dig. , pp. 417
- Hayden, J.D.¹ Baker, F.² Ernst, S.³ Jones, B.⁴ Klein, J.⁵ Lien, M.⁶ McNelly, T.⁷ Mele, T.⁸ Mendez, H.⁹ Nguyen, B.Y.¹⁰ Parrillo, L.¹¹ Paulson, W.¹² Pfiester, J.¹³ Pintchovski, F.¹⁴ See, Y.C.¹⁵ Sivan, R.¹⁶ Somero, B.¹⁷ Travis, E.¹⁸

7
- 0001457303
- (1989) Semicond. Sci. Technol. , vol.4 , pp. 1061
- Ma, T.P.¹

8
- 0015207089
- (1972) J. Appl. Phys. , vol.42 , pp. 5654
- Nicollian, E.H.¹ Berglund, C.N.² Schmidt, P.F.³ Andrews, J.M.⁴

9
- 0026168863
- (1991) J. Electrochem. Soc. , vol.138 , pp. 1752
- Kouvatsos, D.¹ Huang, J.G.² Jaccodine, R.J.³

10
- 0018062167
- edited by S. T. Pantelides (Pergamon, New York)
- (1978) The Physics of [Formula Omitted] and its Interfaces , pp. 160
- DiMaria, D.J.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.