Analysis of Charge Components Induced by Fowler-Nordheim Tunnel Iniection in Silicon Oxides Prepared by Rapid Thermal Oxidation

Journal of the Electrochemical Society

Volumn 142, Issue 3, 1995, Pages 1015-1020

  Roh, Y ^a   Trombefta, L ^a   Han, J ^a  

^a UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; INTERFACES (MATERIALS); MOS DEVICES; THERMOOXIDATION; VOLTAGE MEASUREMENT;

ANOMALOUS POSITIVE CHARGE; CHARGE COMPONENTS; ELECTRON TRAPPING; FLATBAND VOLTAGE; FOWLER-NORDHEIM TUNNEL INJECTION; GATE VOLTAGE; INTERFACE TRAP GENERATION; OXIDE CHARGING; RAPID THERMAL OXIDATION;

SILICA;

EID: 0029271269     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2048514     Document Type: Article

References (10)

1. There are many reports of FNT injection in MOS devices; see, for example, Ref. 3, 4, and 5 below and G. J. Dunn, Appl. Phys. Lett., 53,1650 (1988);
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9. M. V. Fischetti, J. Appl. Phys., 56, 575 (1984).
10. Y. Ruh L. Trombetta, and J. Stathis, in Proceedings of the Biennial Conference on Insulating Films on Semiconductors (1993).