Channel Length and Width Dependence of Hot-Carrier Hardness in Fluorinated MOSFET’s

IEEE Electron Device Letters

Volumn 10, Issue 12, 1989, Pages 540-542

  Nishioka, Yasushiro ^a   Ohyu, Kiyonori ^a   Ohji, Yuzuru ^a   Ma, Tso Ping ^b  

^a HITACHI LTD   (Japan)

^b YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; FLUORINE; STRAIN; SUBSTRATES;

INTERFACE DEGRADATION; SUBMICROMETER DEVICES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024912135     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.43133     Document Type: Article

References (16)

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