Hot-Electron Immunity of Si02 Dielectrics with Fluorine Incorporation

IEEE Electron Device Letters

Volumn 10, Issue 8, 1989, Pages 347-348

  Wright, Peter J ^a   Kasai, Naoki ^a,b   Inoue, Shunsuke ^a   Saraswat, Krishna C ^a  

^a STANFORD UNIVERSITY   (United States)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; FLUORINE; SEMICONDUCTING SILICON; SILICA;

HOT ELECTRON IMMUNITY; INTERFACE TRAPS; POLYSILICON;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024718746     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.31752     Document Type: Article

References (7)

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2. M. D. Deal, D. Pramanik, A. N. Saxena, and K. C. Saraswat, “Tungsten silicide/n+ polysilicon technology for VLSI,” in Proc. 1985 VLSI Multilevel Interconnections Conf. (Santa Clara, CA), June 1985, pp. 324-334.
3. M. Morita, S. Aritome, M. Tsukude, T. Murakawa, and M. Hirose, “Low-temperature SiO2 growth using fluorine-enhanced thermal oxidation,” Appl. Phys. Lett., vol. 47, no. 3, pp. 253-255, Aug. 1, 1985.
4. C. Hu et al., “Hot-electron-induced MOSFET degradation—Model, monitor, and improvement,” IEEE Trans. Electron Devices, vol. ED-32, pp. 375-385, Feb. 1985.
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6. P. J. Wright and K. C. Saraswat, “The effect of fluorine in silicon dioxide gate dielectrics,” IEEE Trans. Electron Devices, vol. 36, pp. 879-889, May 1989.
7. L. D. Thanh, M. Aslam, and P. Balk, “Defect structure and generation of interface states in MOS structures,” Solid-State Electron., vol. 29, pp. 829-840, Aug. 1986.