Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 535-539

  Nicholls, J F H ^a   Gallagher, H ^a   Henderson, B ^a   Trager Cowan, C ^a   Middleton, P G ^a   O'Donnell, K P ^a   Cheng, T S ^a   Foxon, C T ^a   Chai, B H T ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GRAIN BOUNDARIES; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NITRIDES; OPTICAL PROPERTIES; OXIDES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES;

ACCEPTOR PASSIVATION; GALLIUM NITRIDE; LATTICE MATCHING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029745817     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)