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Volumn 68, Issue 7, 1996, Pages 976-978
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Selective growth of gallium nitride layers with a rectangular cross-sectional shape and stimulated emission from the optical waveguides observed by photopumping
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HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL REACTIONS;
EMISSION SPECTROSCOPY;
METALLORGANIC VAPOR PHASE EPITAXY;
NUCLEATION;
OPTICAL PUMPING;
OPTICAL WAVEGUIDES;
SAPPHIRE;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR GROWTH;
SURFACES;
THERMAL EFFECTS;
GALLIUM NITRIDE;
GROWTH TEMPERATURE;
LINE NARROWING;
NITRIDATION;
RECTANGULAR CROSS SECTIONAL SHAPE;
SELECTIVE AREA GROWTH TECHNIQUE;
STIMULATED EMISSION;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0030082981
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.116117 Document Type: Article |
Times cited : (47)
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References (12)
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