Light emission properties of GaN-based double heterostructures and quantum wells

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 949-954

  Loeber, D A S ^a   Redwing, J M ^a   Anderson, N G ^a   Tischler, M A ^a  

^a UNIVERSITY OF MASSACHUSETTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; HETEROJUNCTIONS; LIGHT EMISSION; LIGHT POLARIZATION; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; OPTICALLY PUMPED LASERS; PULSED LASER APPLICATIONS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SPECTROMETERS;

DOUBLE HETEROSTRUCTURES; EDGE EMISSION; EDGE LUMINESCENCE; GALLIUM NITRIDE; PULSED NITROGEN LASER; PUMP INTENSITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029746091     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)