Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 68, Issue 7, 1996, Pages 917-919

  Ponce, F A ^a   Bour, D P ^a   Gotz W ^a   Johnson, N M ^a   Helava, H I ^b   Grzegory, I ^c   Jun, J ^c   Porowski, S ^c  

^a PALO ALTO RESEARCH CENTER   (United States)

^b American Xtal Technology   (United States)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001270966     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116230     Document Type: Article

References (10)

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6. F. A. Ponce and R. D. Dupuis (unpublished).
7. F. A. Ponce, D. P. Bour, W. Götz, and P. J. Wright Appl. Phys. Lett. 68, 57 (1996).
8. K. Pakula, A. Wysmolek, K. P. Korona, J. M. Baranowski, R. Stepniewski, I. Grzegory, M. Bockowski, J. Jun, S. Krukowski, M. Wroblewski, and S. Porowski, in Proceedings of the NATO Advanced Research Workshop Head 95, Smolonica, Slovakia.
9. K. Pakula, A. Wysmolek, K. P. Korona, J. M. Baranowski, R. Stepniewski, I. Grzegory, M. Bockowski, J. Jun, S. Krukowski, M. Worblewski, and S. Porowski, Solid State Commun. (to be published).
10. S. Porowski, J. Jun, M. Bockowski, M. Leszczynski, S. Krukowski, M. Wroblewski, B. Lucznik, and I. Grzegory, Proceedings of the 8th Conference on Semi-Insulating III-V Materials, Warsaw, Poland, 1994, edited by M. Godlewski (World Scientific, Singapore, 1994), p. 61.