Modeling study of GaN growth by MOVPE

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 255-260

  Safvi, S A ^a   Redwing, J M ^a   Tischler, M A ^a   Kuech, T F ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHEMICAL REACTORS; FLOW OF FLUIDS; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; MIXTURES; POLYMERIZATION; REACTION KINETICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

FLOW TUBE SYSTEM; GALLIUM NITRIDE; GROWTH RATES; TRIMETHYLGALLIUM;

NITRIDES;

EID: 0029771076     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)