Electric breakdown in GaN p-n junctions

Applied Physics Letters

Volumn 68, Issue 2, 1996, Pages 229-231

  Dmitriev, V A ^a   Irvine, K G ^a   Carter Jr , C H ^a   Kuznetsov, N I ^b   Kalinina, E V ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000587552     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116469     Document Type: Article

References (11)

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