Observation of stimulated emission, line narrowing, and red shift of emission peak from optically-pumped rectangular cross-sectional GaN optical waveguides fabricated by selective growth

Electronics Letters

Volumn 32, Issue 1, 1996, Pages 34-36

  Tanaka, T ^a   Uchida, K ^a   Watanabe, A ^a   Minagawa, S ^a  

^a HITACHI LTD   (Japan)

Author keywords

Gallium nitride; Optical waveguides

Indexed keywords

CRYSTAL GROWTH; FABRICATION; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PUMPING; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS;

FABRY-PEROT MODE; FABRY-PEROT RESONANT CAVITY; HIGH DENSITY UNIFORM NUCLEATION; LONGITUDINAL MODE HOPPING; SELECTIVE GROWTH TECHNIQUE; TRANSVERSE MODE STABILIZED STRUCTURE;

OPTICAL WAVEGUIDES;

EID: 0030568213     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960005     Document Type: Article

References (7)

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