The luminescence characteristics of GaN heteroepitaxial films

JOM

Volumn 48, Issue 8, 1996, Pages 46-49

  Grudowski, P A ^a   Holmes, A L ^a   Eiting, C J ^a   Dupuis, R D ^a,b,c  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; INJECTION LASERS; LIGHT EMITTING DIODES; LUMINESCENCE OF SOLIDS; ORGANOMETALLICS; PHOTOLUMINESCENCE; SAPPHIRE; THIN FILMS;

ELECTRON EXCITATION; ELECTRONIC DEVICES; GALLIUM NITRIDE; HIGH TEMPERATURE ELECTRONICS; LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOELECTRONIC DEVICES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030217051     PISSN: 10474838     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03223027     Document Type: Article

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