AlGaN/GaN/AlGaN double-heterojunction blue LEDs on 6H-SiC substrates

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 903-907

  Kong, Hua Shuang ^a   Leonard, Michelle ^a   Bulman, Gary ^a   Negley, Gerry ^a   Edmond, John ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; LIGHT EMISSION; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES;

BACKSIDE CONTACT; BLUE LIGHT EMITTING DIODES; DOUBLE HETEROJUNCTION; FOUR WIDTH HALF MAXIMUM; GALLIUM NITRIDE; PEAK EMISSION;

LIGHT EMITTING DIODES;

EID: 0029726099     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)