The effect of substrate misorientation on the optical, structural, and electrical properties of GaN grown on sapphire by MOCVD

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 257-261

  Grudowski, P A ^a   Holmes, A L ^a   Eiting, C J ^a   Dupuis, R D ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Cathodoluminescence (CL); Gallium nitride (GaN); Metalorganic chemical vapor deposition (MOCVD); Misoriented substrates; Mobility; Photoluminescence (PL); X ray diffraction

Indexed keywords

EID: 0000286655     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0160-2     Document Type: Article

References (10)

1. I. Akasaki and H. Amano, J. Electrochem. Soc. 141, 2266 (1994).
2. S. Nakamura, M. Senoh, N. Iwasa and S. Nagahama, Jpn. J. Appl. Phys. 34, L797 (1995).
3. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Jpn. J. Appl. Phys. 35, L74 (1996).
4. K. Doverspike, L.B. Rowland, D.K. Gaskill and J.A. Freitas, Jr., J. Electron. Mater. 24, 269 (1995).
5. C.J. Sun and M. Razeghi, Appl. Phys. Lett. 67, 973 (1993).
6. T.D. Moustakas, R J. Molnar, T. Lei, G. Menon and C.R. Eddy, Jr., Mater. Res. Soc. Symp. Proc. 242, 427 (Pittsburgh, PA: Mater. Res. Soc., 1992).
7. K. Hiramatsu, H. Amano, I. Akasaki, H. Kato, N. Koide and K. Manabe, J. Cryst. Growth 107, 509 (1991).
8. R. Singh, R.J. Molnar, M.S. Unlu and T.D. Moustakas, Appl. Phys. Lett. 64, 336 (1994).
9. P.A. Grudowski, A.L. Holmes, C.J. Eiting and R.D. Dupuis, JOM 48, 46 (1996).
10. P.A. Grudowski, A.L. Holmes, C.J. Eiting and R.D. Dupuis, Appl. Phys. Lett. 69, 3626 (1996).