Photopumped stimulated emission from homoepitaxial GaN grown on bulk GaN prepared by sublimation method

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 1 B, 1996, Pages

  Kurai, Satoshi ^a   Naoi, Yoshiki ^a   Abe, Toshimitsu ^a   Ohmi, Susumu ^a   Sakai, Shiro ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; LIGHT EMISSION; LIGHT POLARIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PUMPING (LASER); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBLIMATION;

GALLIUM NITRIDE; PHOTOPUMPED STIMULATED EMISSION;

SEMICONDUCTOR LASERS;

EID: 0029753163     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l77     Document Type: Article

References (12)