Effect of shroud flow on high quality InxGa1-xN deposition in a production scale multi-wafer-rotating-disc reactor

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 749-753

  Yuan, C ^a   Salagaj, T ^a   Kroll, W ^a   Stall, R A ^a   Schurman, M ^b   Hwang, C Y ^b   Li, Y ^b   Mayo, W E ^b   Lu, Y ^b   Krishnankutty, S ^c   Kolbas, R M ^c  

^a EMCORE Corporation   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c North Carolina State University   (United States)

Author keywords

Double crystal x ray diffraction (DCXRD); Heterojunction; Multiwafer rotating disc MOCVD; Photoluminescence; Shroud flow

Indexed keywords

EID: 0042844508     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666535     Document Type: Article

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