Two-dimensional electron gas properties of AIGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates

Applied Physics Letters

Volumn 69, Issue 7, 1996, Pages 963-965

  Redwing, J M ^a   Tischler, M A ^a   Flynn, J S ^a   Elhamri, S ^b   Ahoujja, M ^b   Newrock, R S ^b   Mitchel, W C ^c  

^a Advanced Technology Materials Inc   (United States)

^b UNIVERSITY OF CINCINNATI   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000901183     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117096     Document Type: Article

References (8)

1. M. S. Shur, A. Khan, B. Gelmont, R. J. Trew, and M. W. Shin, Inst. Phys. Conf. Ser. 141, 419 (1995).
2. M. A. Khan, J. N. Kuznia, J. M. Van Hove, N. Pan, and J. Carter, Appl. Phys. Lett. 60, 3027 (1992).
3. M. A. Khan, A. Bhattarai, J. N. Kuznia, and D. T. Olson, Appl. Phys. Lett. 63, 1214 (1993).
4. M. A. Khan, J. N. Kuznia, D. T. Olson, W. J. Schaff, J. W, Burm, and M. S. Shur, Appl. Phys. Lett. 65, 1121 (1994).
5. S. C. Binari, L. B. Rowland, G. Kelner, W. Kurppa, H. B. Dietrich, K. Doverspike, and D. K. Gaskill, Inst. Phys. Conf. Ser. 141, 459 (1995).
6. M. A. Khan, J. M. Van Hove, J. N. Kuznia, and D. T. Olson, Appl. Phys. Lett. 58, 2408 (1991).
7. M. A. Khan, Q. Chen, C. J. Sun, M. Shur, and B. Gelmont, Appl. Phys. Lett. 67, 1429 (1995).
8. J. M. Redwing, J. S. Flynn, M. A. Tischler, W. Mitchel, and A. Saxler, Mater. Res. Soc. Symp. Proc. 395, 201 (1996).