Fabrication and properties of AlGaN/GaInN double heterostructure grown on 6H-SiC(0001)Si

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 869-877

  Amano, Hiroshi ^a   Sota, Shigetoshi ^a   Nishikawa, Masaki ^a   Yoshida, Masato ^a   Kawaguchi, Makoto ^a   Ohta, Masahiro ^a   Sakai, Hiromitsu ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; LASERS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; OPTICAL PUMPING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; SURFACE ROUGHNESS;

ALGAN GAINN DOUBLE HETEROSTRUCTURES; STIMULATED EMISSION; THRESHOLD POWER DENSITY;

SEMICONDUCTOR GROWTH;

EID: 0029726681     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (28)