Deep-submicrometer CMOS technology with reoxidized or annealed nitrided-oxide gate dielectrics prepared by rapid thermal processing

IEEE Transactions on Electron Devices

Volumn 39, Issue 1, 1992, Pages 118-126

  Hori, Takashi ^a   Akamatsu, Susumu ^a   Odake, Yoshinori ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT - NITRIDING; OXIDES;

DEEP-SUBMICROMETER CMOS TECHNOLOGY; GATE DIELECTRIC INTEGRITY; NITIDED-OXIDE GATE DIELECTRICS; RE-ANNEALED NITRIDED-OXIDE GATE; REOXIDATION;

INTEGRATED CIRCUITS, CMOS;

EID: 0026707003     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.108220     Document Type: Article

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