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Volumn 73, Issue 1, 1993, Pages 277-288

Generation of Si-SiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures

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EID: 0039892889     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.353901     Document Type: Article
Times cited : (27)

References (90)
  • 57
    • 84951234635 scopus 로고    scopus 로고
    • The energy-integrated (around 0.7 eV centered at mid-gap) interface state density is measured from the ledge between a positive and negative traces going HFCV measured at low temperature (100 K). See a brief description in Refs. 11 and 16, and a more complete description in C. S. Jenq, PhD. dissertation, Princeton University, 1977 (unpublished—available from University Microfilms International, P.O. Box 1764, Ann Arbor, MI 48106).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.