High-Temperature Rapid Thermal Nitridation of Silicon Dioxide for Future VLSI Applications

IEEE Electron Device Letters

Volumn 6, Issue 9, 1985, Pages 476-478

  Chang, C C ^a   Kamgar, A ^b   Kahng, D ^b  

^a TELCORDIA TECHNOLOGIES   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILMS - DIELECTRIC; SEMICONDUCTOR DEVICES, MOS - DIFFUSION; SILICON COMPOUNDS;

DIFFUSION BARRIER; HIGH-TEMPERATURE RAPID THERMAL NITRIDATION; MOS GATE INSULATOR; SILICON DIOXIDE; TWO-ACTIVATION-ENERGY MODEL OF NITRIDATION;

INTEGRATED CIRCUITS, VLSI;

EID: 0022114850     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1985.26198     Document Type: Article

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