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Journal of Applied Physics

Volumn 48, Issue 1, 1977, Pages 286-293

Emission probability of hot electrons from silicon into silicon dioxide

(3) Ning, T H a Osburn, C M a Yu, H N a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSISTORS, FIELD EFFECT;

ELECTRONS;

EID: 0017449653 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.323374 Document Type: Article

Times cited : (219)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.