Dependence of Channel Electric Field on Device Scaling

IEEE Electron Device Letters

Volumn 6, Issue 10, 1985, Pages 551-553

  Chan, T Y ^a   Ko, P K ^a   Hu, C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; TRANSISTORS, FIELD EFFECT;

HOT-ELECTRON EFFECTS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022135706     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1985.26226     Document Type: Article

References (6)

1. C. Hu, S. C. Tam, F.-C. Hsu, P.-K. Ko, T.-Y. Chan, and K. W. Terrill, “Hot-electron induced MOSFET degradation—Model, monitors, and improvement,” IEEE Trans. Electron Devices, vol. ED-32, pp. 375–385, Feb. 1985.
2. Y. A. El Mansy and A. R. Boothroyd, “A simple two-dimensional model for IGFET operation in the saturation region.” IEEE Trans. Electron Devices, vol. ED-24, p. 254, Mar. 1977.
3. T. N. Nguyen and J. D. Plummer, “Physical mechanisms responsible for short channel effects in MOS devices,” in IEDM Tech. Dig., 1981, pp. 596–599.
4. T. Y. Chan, P. K. Ko, and C. Hu, “A simple method to characterize substrate current in MOSFET’s,” IEEE Electron Device Lett., vol. EDL-5, pp. 505–507, 1984.
5. S. Selberherr, A. Schutz, and H. Wolfgang Potzl, “MINIMOS—A two-dimensional MOS transistor analyzer,” IEEE Trans. Electron Devices, vol. ED-27, p. 1540, Aug. 1980.
6. To be published.