Electrical Characteristics of Rapid Thermal Nitrided-Oxide Gate n- and p-MOSFET’s with Less Than 1 Atom% Nitrogen Concentration

IEEE Transactions on Electron Devices

Volumn 41, Issue 4, 1994, Pages 546-552

  Momose, Hisayo Sasaki ^a   Morimoto, Toyota ^a   Ozawa, Yoshio ^a   Yamabe, Kikuo ^a   Iwai, Hiroshi ^a  

^a ULSI Research Center ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; AUGER ELECTRON SPECTROSCOPY; ELECTRIC PROPERTIES; GATES (TRANSISTOR); HOT CARRIERS; NITRIDING; OXIDES; RELIABILITY; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE;

CHARGE TRAPPING; NITRIDED OXIDE FILMS; RAPID THERMAL NITRIDATION;

MOSFET DEVICES;

EID: 0028416619     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.278508     Document Type: Article

References (21)

1. L. Dori. J. Sun, M. Arienzo, S. Basavaiah, Y. Taur, and D. Zichermann, “Very thin nitride/oxide composite gate insulator gate insulator for VLSI CMOS.” Dig. Techn. Papers, VLSI Symp. on Technol., Karuizawa, pp. 25-26, May 1987.
2. A. Yankova, L. Do Thanh, and P. Balk, “Effects of thermalnitridation on the trapping characteristics of SiO2 films/’ Solid-State Electron., vol. 30, no. 9, pp. 939-946, 1987.
3. T. Kaga and T. Hagiwara, “Short- and long-term reliability of nitrided oxide MOSFET’s,” IEEE Trans. Electron Devices, vol. 35, pp. 929-934, 1988.
4. T. Hori and H. Iwasaki, “Improved hot-carrier immunity in submicrometer MOSFET’s with reoxidized nitrided oxides prepared by rapid thermal processing,” IEEE Electron Device Lett., vol. 10, pp. 64-66, 1989.
5. A. Gupta, S. Pradhan and K. P. Roenker, “Hot-carrier-induced degradation in nitrided oxide MOSFET’s,” IEEE Trans. Electron Devices, vol. 36, pp. 577-588, 1989.
6. T. Hori and H. Iwasaki, “Improved transconductance under high normal field in MOSFET’s with ultrathin nitrided oxides,” IEEE Electron Device Lett., vol. 10, pp. 195-197, 1989.
7. T. Hori, “Demands for submicron MOSFET's and nitrided oxide gatedielectrics,” Extended Abstracts of the 21th Conf. on Solid State Devices and Materials, Tokyo, pp. 197-200, 1989.
8. H. S. Momose, S. Kitagawa, K. Yamabe, and H. Iwai, “Hot carrier related phenomena for n- and P-MOSFETs with nitrided gate oxide by RTP,” IEDM Tech. Dig., pp. 267-270, 1989.
9. A. T. Wu, T. Y. Chan, V. Murali, S. W. Lee, J. Nulman, and M. Garner, “Nitridation induced surface donor layer in silicon and it’s impact” on the in IEDM Tech. Dig. pp. 429-432, Dec. 1990.
10. T. Hori and H. Iwasaki, “The impact of ultrathin nitrided oxide gatedielectries on MOS device performance improvement,” IEDM Tech. Dig., pp. 459-462, 1989.
11. H. S. Momose, S. Takagi, S. Kitagawa, K. Yamabe, and H. Iwai, “Field dependent mobilities at RT and 77K for »- and p-MOSFETs with nitrided gate oxide by RTP,” 20th IEEE Semicond. Interface Special. Conf., Ft. Lauderdale, FL, p. 1. 5, Dec. 1989.
12. H. Iwai, H. S. Momose, S. Takagi, T. Morimoto, S. Kitagawa, S. Kambayashi, K. Yamabe, and S. Onga, “Analysis of an ONO gate film effect on n- and />-MOSFET mobilities,” Submitted to VLSI Symp. Technol, Honolulu, June 1990.
13. G. J. Dunn and S. A. Scott, “Channel hot-carrier stressing of reoxidized nitrided silicon dioxides,” IEEE Trans. Electron Devices, vol. 37, pp. 1719-1726, 1990.
14. H. S. Momose, T. Morimoto, K. Yamabe, and H. Iwai, “Relationship between mobility and residual-mechanical stress as measured by Raman spectroscopy for nitrided-oxide-gate MOSFETs,” in IEDM Tech. Dig. pp. 65-68, Dec. 1990.
15. T. Morimoto, H. S. Momose, Y. Ozawa, K. Yamabe, and H. Iwai, “Effects of boron penetration and resultant limitations in ultra thin pureoxide and nitrided-oxide gate-films,” in IEDM Tech. Dig. pp. 429-432, Dec. 1990.
16. H. Hwang, W. Ting, D.-L. Kwong, and J. Lee, “Electrical and reliability characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N2O,” in IEDM Tech. Dig. pp. 421-424, Dec. 1990.
17. A. Uchiyama, H. Fukuda, T. Hayashi, T. Iwabuchi, and S. Ohno, “High performance dual-gate sub-halfmicron CMOSFETs with 6 nmthick nitrided SiO2 films in an N2O ambient,” in IEDM Tech. Dig. pp. 425-428, Dec. 1990.
18. G. Q. Lo, W. Ting, J. Ahn, and D.-L. Kwong, “Improved performance and reliability of MOSFETs with ultrathin gate oxides prepared by conventional furnace oxidation of Si in pure N2O ambient,” Dig. of Techn. Papers, VLSI Symp. on Technol, Oiso, Japan, pp. 43-44, May 1991.
19. G. Q. Lo, W. Ting, J. Ahn and D.-L. Kwong, “P-channel MOSFET’s with ultrathin N20 gate oxides,” IEEE Electron Device Lett., vol. 13, pp. 111-113, 1992.
20. Z. Liu, J. Krick, H. Wann, P. Ko, and C. Hu, “The effect of furnace N2O anneal on MOSFETs,” in IEDM Tech. Dig. pp. 625-628, Dec. 1992.
21. E. Takeda, Y. Nakagome, H. Kume, and S. Asai, “New hot-carrier injection and device degradation in submicron MOSFETs,” IEE Proc., vol. 130, Pt. I, no. 3, pp. 144-150, June 1983.