Impurity Barrier Properties of Reoxidized Nitrided Oxide Films for Use with p+-Doped Polysilicon Gates

IEEE Electron Device Letters

Volumn 12, Issue 3, 1991, Pages 128-130

  Cable, James S ^a,b   Mann, R A ^b   Woo, Jason C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDES - THIN FILMS; SEMICONDUCTING SILICON; TRANSISTORS, FIELD EFFECT;

BORON DIFFUSION; IMPURITY BARRIER; REOXIDIZED NITRIDED OXIDE FILMS;

INTEGRATED CIRCUITS, CMOS;

EID: 0026117813     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.75733     Document Type: Article

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