Rapid thermal oxidation of silicon in N2O between 800 and 1200°C: Incorporated nitrogen and interfacial roughness

Applied Physics Letters

Volumn 65, Issue 7, 1994, Pages 848-850

  Green, M L ^a   Brasen, D ^a   Evans Lutterodt, K W ^a   Feldman, L C ^a   Krisch, K ^a   Lennard, W ^b   Tang, H T ^b   Manchanda, L ^a   Tang, M T ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001681022     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.112980     Document Type: Article

References (23)