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Japanese Journal of Applied Physics

Volumn 29, Issue 12, 1990, Pages 2333-2336

Highly reliable thin nitrided films formed by rapid thermal processing in an ambient

(3) Fukuda, Hisashi a Arakawa, Tomiyuki a Ohno, Seigo a

a Semiconductor Technology Laboratory ^* (Japan)

Author keywords

Dielectric reliability; MOS structure; Nitridation; Rapid thermal processing; Si02 si interface; Thin dielectric film

Indexed keywords

EID: 84941604197 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.29.L2333 Document Type: Article

Times cited : (84)

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