High performance dual-gate sub-halfmicron CMOSFETs with 6 nm-thick nitride SiO2 films in an N2O ambient

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1990, Pages 425-428

  Uchiyama, A ^a   Fukuda, H ^a   Hayashi, T ^a   Iwabuchi, T ^a   Ohno, S ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; INTEGRATED CIRCUITS, CMOS; INTEGRATED CIRCUITS, LSI; NITROGEN OXIDES;

CMOS LSI; CMOSFET; DUAL-GATE CMOSFET; SUB-HALFMICRON CMOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025577946     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)