Three Hot-Carrier Degradation Mechanisms in Deep-Submicron PMOSFET's

IEEE Transactions on Electron Devices

Volumn 42, Issue 1, 1995, Pages 109-115

  Woltjer, Reinout ^a   Paulzen, Gel M ^a   Pomp, Henk G ^a   Lifka, Herbert ^a   Woerlee, Pierre H ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHARGE CARRIERS; DIELECTRIC MATERIALS; ELECTRIC CONTACTS; ELECTRIC VARIABLES MEASUREMENT; ESTIMATION; GATES (TRANSISTOR); GEOMETRY; SEMICONDUCTING SILICON; TRANSCONDUCTANCE;

DEEP SUBMICRON PMOSFET; GATE OXIDE; HOT CARRIER DEGRADATION; HOT ELECTRON INDUCED PUNCHTHROUGH; INTERFACE STATES; OPTICAL LITHOGRAPHY; OXIDE CHARGE GENERATION; SURFACE CHANNEL TRANSISTORS; TRANSCONDUCTANCE DEGRADATION; TRANSISTOR GEOMETRIES;

MOSFET DEVICES;

EID: 0029184921     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.370028     Document Type: Article

References (15)

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