Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs

IEEE Transactions on Power Electronics

Volumn 31, Issue 10, 2016, Pages 7148-7160

  Gurpinar, Emre ^a   Castellazzi, Alberto ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

Insulated Gate Bipolar Transistors; Inverters; Multilevel systems; Power conversion; Power electronics; Power MOSFETs; Power Semiconductor Switches

Indexed keywords

BENCHMARKING; EFFICIENCY; ELECTRIC INVERTERS; GALLIUM NITRIDE; HEAT SINKS; HIGH ELECTRON MOBILITY TRANSISTORS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); PASSIVE FILTERS; POWER CONVERTERS; POWER ELECTRONICS; POWER HEMT; POWER MOSFET; RECONFIGURABLE HARDWARE; SILICON; SILICON CARBIDE; SWITCHING; SWITCHING FREQUENCY; WIDE BAND GAP SEMICONDUCTORS;

GALLIUM NITRIDES (GAN); HEAT SINK TEMPERATURE; HIGH-FREQUENCY APPLICATIONS; MULTI-LEVEL SYSTEMS; POWER CONVERSION; POWER MOSFETS; POWER SEMICONDUCTOR SWITCHES; SWITCHING PERFORMANCE;

MOSFET DEVICES;

EID: 84971516553     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2015.2506400     Document Type: Article

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