Recent advances and future prospects on GaN-based power devices

2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014

Volumn , Issue , 2014, Pages 2075-2078

  Ueda, Tetsuzo ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

DC DC converter; GaN; Gate Injection Transistor; Inverter

Indexed keywords

DC-DC CONVERTERS; ELECTRIC DRIVES; GALLIUM ALLOYS; HVDC POWER TRANSMISSION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS; SILICON; SWITCHING SYSTEMS;

GAN; GATE INJECTION TRANSISTORS; HIGH FREQUENCY HF; HIGH FREQUENCY OPERATION; INVERTER; ISOLATED DC-DC CONVERTERS; LLC RESONANT CONVERTER; RELIABLE OPERATION;

GALLIUM NITRIDE;

EID: 84906672759     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPEC.2014.6869874     Document Type: Conference Paper

References (7)

1. M. Hikita, M. Yanagihara, K. Nakazawa, H. Ueno, Y. Hirose, T. Ueda, Y. Uemoto, T. Tanaka, D. Ueda, and T. Egawa, "350V/150A AIGaN/GaN power HFET on Silicon substrate with source-via grounding (SVG) structure," IEEE Trans. Electron Device, vol. 52, no.9, ppI963-1968, 2005.
2. Y. Uemoto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M Yanagihara, T. Ueda, T. Tanaka, D. Ueda, "Gate Injection Transistor (GTT)-A Normally-Off AIGaN/GaN Power Transistor Using Conductivity Modulation,"IEEE Trans. Electron Device, vol. 54, no. 1 2, pp3393-3399, 2007.
3. T. Ueda, T. Tanaka, and D. Ueda, "GaN Transistors for Power Switching and Millimeter-wave Applications," International Journal of High Speed Electronics and Systems, voLl9, pp. 1 45-152,2009
4. M.Yanagihara, Y.Uemoto, T. Ueda, T.Tanaka, and D.Ueda, "Recent advances in GaN transistors for future emerging applications " Physica Status Solidi(a), Vol. 206, pp. 1221-1227, 2009.
5. T. Morita, S. Tamura, Y. Anda, M. Ishida, Y. Uemoto, T. Ueda, T. Tanaka, and D. Ueda, "99.3% Efficiency of Three-Phase Inverter Using GaN-based Gate Injection Transistors," Proc. 26th IEEE Applied Power Electronics Conf. and Expo. (APEC2011), Fort Worth, USA, March 2011, pp.48 1-483.
6. S.Nagai, N.Negoro, T.Fukuda, N.Otsuka, H.Sakai, T.Ueda, T.Tanaka, and D. Ueda, "A DC-Isolated Gate Drive IC with Drive-bymicrowave Technology for Power Switching Devices," Digest of Technical Papers 20i2 ISSCC, San Francisco, USA, February 2012, pp. 404-406.
7. K.Mizutani, H. Ueno, Y.Kudoh, S.Nagai, K.lnoue, N.Otsuka, T.Ueda, T. Tanaka, and D.Ueda, "Integrated Power Design Platform Based on Modeling Dynamic Behavior of GaN Devices," iEEE IEDM Tech. Dig., San Francisco, USA, December.