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15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe

Volumn , Issue , 2012, Pages

Application of a new 600 v GaN transistor in power electronics for PV systems

(3) Hensel, Andreas a Wilhelm, Christian a Kranzer, Dirk a

a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE (Germany)

Author keywords

DC DC Converter; GaN Transistor; Photovoltaic

Indexed keywords

BLOCKING VOLTAGE; DRIVING CIRCUITS; FREEWHEELING DIODES; GALLIUM NITRIDES (GAN); GAN TRANSISTORS; GATE INJECTION TRANSISTORS; HIGH EFFICIENT; KEY CHARACTERISTICS; NORMALLY OFF; PHOTOVOLTAIC; PHOTOVOLTAIC SYSTEMS; POWER ELECTRONIC CONVERTERS; PV SYSTEM; SCHOTTKY DIODES; SI DEVICES; SWITCHING LOSS;

DC-DC CONVERTERS; MOTION CONTROL; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; TRANSISTORS;

GALLIUM NITRIDE;

EID: 84874235776 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/EPEPEMC.2012.6397350 Document Type: Conference Paper

Times cited : (33)

References (8)

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2
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- Development of A Highly Compact and Efficient Solar Inverter with Silicon Carbide Transistors , pp. 2010
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- (2011) Development of A Boost Converter for PV Systems Based on SiC BJTs.
- Hensel, A.¹ Wilhelm, D.² Kranzer, D.³

5
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- (2011) EPC1012

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- (2011) GaN-Based Multi-Junction Diode with Low Reverse Leakage Current Using P-type Barrier Controlling Layer , pp. 2621-2624
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