Characterization and Implementation of Dual-SiC MOSFET Modules for Future Use in Traction Converters

IEEE Transactions on Power Electronics

Volumn 30, Issue 8, 2015, Pages 4079-4090

  Fabre, Joseph ^a   Ladoux, Philippe ^a   Piton, Michel ^b  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b ALSTOM   (France)

Author keywords

Loss measurement; power MOSFET; power semiconductor devices; silicon carbide; switching loss

Indexed keywords

ELECTRIC INVERTERS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER CONVERTERS; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SILICON; SILICON CARBIDE; SWITCHING;

LOSS MEASUREMENT; POWER MOSFET; POWER SEMICONDUCTOR DEVICES; SILICON CARBIDE MOSFETS; SILICON CARBIDES (SIC); SWITCHING LOSS; THEORETICAL LOSS CALCULATION; VOLTAGE SOURCE INVERTER;

MOSFET DEVICES;

EID: 84924875403     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2014.2352863     Document Type: Article

References (52)

1. B. J. Baliga, M. S. Adler, P. V. Gray, R. P. Love, and N. Zommer, "The insulated gate rectifier (IGR): A new power switching device," IEDM Tech. Dig., vol. 28, pp. 264-267, 1982.
2. J. P. Russell, A. M. Goodman, L. A. Goodman, and J. M. Neilson, "The COMFET - A new high conductance MOS-gates device," IEEE Electron Device Lett., vol. EDL-4, no. 3, pp. 63-65, Mar. 1983.
3. M. Debruyne, "High power IGBT traction drives," presented at the World Conf. Railway Res., Cologne, Germany, Nov. 2001.
4. th Eur. Conf. Power Electron. Appl., Lille, France, Sep. 2013, pp. 1-8.
5. th Int. Symp. Power Semicond. Devices ICs, Bruges, Belgium, Jun. 2012, pp. 137-140.
6. nd Int. Symp. Power Semicond. Devices ICs, Hiroshima, Japan, Jun. 2010, pp. 391-394.
7. th Int. Workshop IEEE Junction Technol., Kyoto, Japan, Jun. 2013.
8. X. Zhuxian, L. Ming, W. Fei, and L. Zhenxian, "Investigation of Si IGBT Operation at 200 °C for traction applications," IEEE Trans. Power Electron., vol. 28, no. 5, pp. 2604-2615, May 2013.
9. P. Kleinichen, R. Alvarez, M. Buschendorf, and S. Bernet, "Turn-on loss reduction of 6.5 kV/500 A trench/field-stop IGBTs using a simple GDU," in Proc. IEEE Energy Convers. Congr. Expo., Denver, CO, USA, Sep. 2013, pp. 3671-3678.
10. J. G. Bauer, T. Duetemeyer, and L. Lorenz, "New IGBT development for traction drive and wind power," in Proc. Int. IEEE Power Electron. Conf., Jun. 2010, pp. 768-772.
11. J. Millan, "A review of WBG power semiconductor devices," in Proc. Int. Semicond. Conf., Oct. 2012, vol. 1, pp. 57-66.
12. th Annu. IEEE Appl. Power Electron. Conf. Expo., Feb. 2010, pp. 401-407.
13. D. C. Patel, A. Kadavelugu, S. Madhusoodhanan, S. Bhattacharya, K. Hatua, S. Leslie, S.-H. Ryu, D. Grider, A. Agarwal, "15 kV SiC IGBT based three-phase three-levelmodular-leg power converter," in Proc. IEEE Energy Convers. Congr. Expo., Sep. 2013, pp. 3291-3298.
14. S. Madhusoodhanan, K. Hatua, S. Bhattacharya, S. Leslie, R. Sei-Hyung, M. Das, A. Agarwal, D. Grider, "Comparison study of 12 kV n-type SiC IGBT with 10 kV SiC MOSFET and 6.5 kV Si IGBT based on 3L-NPC VSC applications," in Proc. IEEE Energy Convers. Congr. Expo., Raleigh, NC, USA, Sep. 2012, pp. 310-317.
15. Y. Du, J. Wang, G. Wang, and A. Q. Huang, "Modeling of the high-frequency rectifier with 10-kV SiC JBS diodes in high-voltage series resonant type DC-DC converters," IEEE Trans. Power Electron., vol. 29, no. 8, pp. 4288-4300, Aug. 2014.
16. R. Wang, D. Boroyevich, P. Ning, Z. Wang, F. Wang, P. Mattavelli, K. Ngo, and K. Rajashekara, "A high-temperature SiC three-phase ac-dc converter design for > 100 °C ambient temperature," IEEE Trans. Power Electron., vol. 28, no. 1, pp. 555-572, Jan. 2013.
17. C. Raynaud, D. Tournier, H. Morel, and D. Planson, "Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices," Diamond Related Mater, vol. 19, no. 1, pp. 1-6, 2010.
18. A. Lostetter, J. Hornberger, B. McPherson, B. Reese, R. Shaw, M. Schupbach, B. Rowden, A. Mantooth, J. Balda, T. Otsuka, K. Okumura, and M. Miura, "High-temperature silicon carbide and silicon on insulator based integrated powermodules," in Proc. IEEE Veh. Power Propul. Conf., 2009, pp. 1032-1035.
19. C. DiMarino, Z. Chen, D. Boroyevich, R. Burgos, and P. Mattavelli, "Characterization and comparison of 1.2 kV SiC power semiconductor devices,"in Proc. Eur. Conf. Power Electron. Appl., Sep. 2013, pp. 1-10.
20. M. Mermet-Guyennet, A. Castellazzi, J. Fabre, P. Ladoux, "Electrical analysis and packaging solutions for high-current fast-switching sic components,"in Proc. Int. Conf. Integr. Power Electron. Syst., Nuremberg, Germany, Mar. 6-8, 2012.
21. A. Rodriguez Alonso, M. Fernandez Diaz, D. G. Lamar, M. Arias Perez de Aspeitia, M. M. Hernando, and J. Sebastian, "Switching performance comparison of the SiC JFET and SiC JFET/Si MOSFET cascode configuration,"IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2428-2440, May 2014.
22. P. Ladoux, M. Mermet-Guyennet, J. Casarin, and J. Fabre, "Outlook for SiC devices in traction converters," presented at the IEEE Int. Conf. Electr. Syst. Aircraft, Railway Ship Propul., Bologna, Italy, Oct. 16-18 2012.
23. J. Casarin, P. Ladoux, B. Chauchat, D. Dedecius, and E. Laught, "Evaluation of high voltage SiC diodes in a medium frequency AC/DC converter for railway traction," in Proc. Int. Symp. Power Electron. Electr. Drives Autom. Motion, Sorrento, Italy, Jun. 2012, pp. 1182-1186.
24. J. Biela, M. Schweizer, S. Waffler, and J. W. Kolar, "SiC versus Si - Evaluation of potentials for performance improvement of inverter and DC-DC converter systems by SiC power semiconductors," IEEE Trans. Ind. Electron., vol. 58, no. 7, pp. 2872-2882, Jul. 2011.
25. M. Mermet-Guyennet, "New power technologies for traction drives," in Proc. IEEE Int. Symp. Power Electron. Electr. Drives Autom. Motion, Pisa, Italy, Jun. 2010, pp. 719-723.
26. S. Bernet, "Recent developments of high power converters for industry and traction applications," IEEE Trans. Power Electron., vol. 15, no. 6, pp. 1102-1117, Nov. 2000.
27. A. Merkert, T. Krone, and A. Mertens, "Characterization and scalable modeling of power semiconductors for optimized design of traction inverters with Si- and SiC-devices," IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2238-2245, May 2014.
28. [Online]. Available: http://www.cree.com/
29. [Online]. Available: http://www.rohm.com/
30. Z. Liang, P. Ning, and F. Wang, "Development of advanced all-SiC power modules," IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2289-2295, May 2014.
31. M. Horio, Y. Iizuka, and Y. Ikeda, "Packaging technologies for SiC power modules," Fuji Electr. Rev., vol. 58, no. 2, pp. 75-80, Nov. 2011.
32. T. Nakamura, M. Aketa, Y. Nakano, M. Sasagawa, and T. Otsuka, "Novel developments towards increased SiC power device and module efficiency,"in Proc. IEEE Energytech, Cleveland, OH, USA, May 29-31, 2012, pp. 1-6.
33. J. Fabre, P. Ladoux, and M. Piton, "Characterization of SiC MOSFET dual modules for future use in railway traction chains," presented at the PCIM, Nuremberg, Germany, May 7-9, 2012.
34. F. Forest, J.-J. Huselstein, S. Faucher, M. Elghazouani, P. Ladoux, T. A. Meynard, F. Richardeau, and C. Turpin, "Use of opposition method in the test of high-power electronic converters," IEEE Trans. Ind. Electron., vol. 52, no. 2, pp. 530-541, Apr. 2006.
35. B. Cougo, H. Schneider, and T. Meynard, "Accurate switching energy estimation of wide bandgap devices used in converters for aircraft applications,"in Proc. Eur. Conf. Power Electron. Appl., Sep. 2013, pp. 1-10.
36. J. Fabre, P. Ladoux, and M. Piton, "Opposition method based test bench for characterization of SiC Dual MOSFET Modules," presented at the PCIM'13, Nuremberg, Germany, May 14-16, 2013.
37. th Int. Conf. Integr. Power Electron. Syst., Nuremberg, Germany, Mar. 2010, pp. 1-6.
38. E. Batista and J. M. Dienot, "EMC characterization for switching noise investigation on power transistors," in Proc. IEEE EMC Detroit Symp., Detroit, MI, USA, Aug. 2008, pp. 1-7.
39. J. M. Dienot and E. Batista, "EM-Matrix antenna for real-time measurements of electromagnetic noise in power electronic modules," in Proc. Antennas Propag. Conf., 2009, pp. 753-756.
40. C. Chen, X. Pei, Y. Chen, and Y. Kang, "Investigation, evaluation, and optimization of stray inductance in laminated busbar," IEEE Trans. Power Electron., vol. 29, no. 7, pp. 3679-3693, Jul. 2014.
41. N. Oswald, P. Anthony, N. McNeill, and B. H. Stark, "An experimental investigation of the tradeoff between switching losses and EMI generation with hard-switched All-Si, Si-SiC, and all-SiC device combinations,"IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2393-2407, May 2014.
42. T. R. Mukundan, "Calculation of voltage surges on motors fed from PWM drives - A simplified approach," IEEE Trans. Energy Convers., vol. 19, no. 1, pp. 223-225, Mar. 2004.
43. G. L. Skibinski, R. J. Kerkman, and D. Schlegel, "EMI emissions of modern PWM AC drives," IEEE Ind. Appl. Mag., vol. 5, no. 6, pp. 47-81, Nov./Dec. 1999.
44. R. Robutel, C. Martin, C. Buttay, H. Morel, P. Mattavelli, D. Boroyevich, and R. Meuret, "Design and implementation of integrated common mode capacitors for SiC-JFET inverters," IEEE Trans. Power Electron., vol. 29, no. 7, pp. 3625-3636, Jul. 2014.
45. th Int. Conf. IEEE Power Electron., 2007, pp. 1151-1155.
46. J. M. Dienot, E. Batista, and L. Bouchelouk, "Investigations and simulation of electromagnetic behavior in 3D hybrid electronic devices for embedded applications," presented at the Eur. Electromagn. Conf., Lausanne, Switzerland, 2008.
47. th Eur. Conf. IEEE Power Electron. Appl., 2013, pp. 1-10.
48. D. Christen, U. Badstuebner, J. Biela, J. W. Kolar, "Calorimetric power loss measurement for highly efficient converters," in Proc. Int. Power Electron. Conf., Jun. 2010, pp. 1438-1445.
49. T. A. Salem and R. A. Wood, "1000-H evaluation of a 1200-V, 880-A all-SiC dual module," IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2192-2198, May 2014.
50. M. A. Brubaker, H. C. Kirbie, and T. A. Hosking, "Integrated DC link capacitor/bus structures to minimize external ESL contribution to voltage overshoot," in Proc. IEEE Transp. Electrification Conf., Dearborn, MI, USA, Jun. 2012, pp. 1-6.
51. S. Edward, "Low inductance-low temp rise DC bus capacitor properties enabling the optimization of high power inverters," in Proc. PCIM Europe, Nuremberg, Germany, May 4-6, 2010, pp. 75-80.
52. J. Lemmens, P. Vanassche, and J. Driesen, "Optimal control of traction motor drives under electrothermal constraints," IEEE J. Emer. Sel. Topics Power Electron., vol. 2, no. 2, pp. 249-263, Jun. 2014.