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Volumn , Issue , 2011, Pages 50-55

Investigating the effect of snubber capacitor on high power IGBT turn-off

Author keywords

Direct mount snubber; Gate resitance; High power IGBT; Snubber capacitor; Turn off loss

Indexed keywords

DIRECT MOUNT SNUBBER; GATE RESITANCE; HIGH POWER IGBT; SNUBBER CAPACITOR; TURN-OFF LOSS;

EID: 79953124547     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICEES.2011.5725301     Document Type: Conference Paper
Times cited : (20)

References (9)
  • 1
    • 77950542014 scopus 로고    scopus 로고
    • Comparison of trench gate IGBT and CIGBT devices for increasing the power density from high power modules
    • March
    • N. Luther-King, E.M.S. Narayanan, L. Coulbeck, A. Crane, and R. Dudley, "Comparison of Trench Gate IGBT and CIGBT devices for increasing the power density from High Power modules, " IEEE Transactions on Power Electronics, vol. 25, no. 3, pp. 583-591, March 2010.
    • (2010) IEEE Transactions on Power Electronics , vol.25 , Issue.3 , pp. 583-591
    • Luther-King, N.1    Narayanan, E.M.S.2    Coulbeck, L.3    Crane, A.4    Dudley, R.5
  • 6
    • 1942487835 scopus 로고    scopus 로고
    • Turn-off switching analysis considering dynamic avalanche effect for low turn-off loss highvoltage IGBTs
    • T. Ogura, H. Ninomiya, K. Sugiyama and T. Inoue, "Turn-off switching analysis considering dynamic avalanche effect for low turn-off loss highvoltage IGBTs", IEEE Transactions on Electron Devices, vol. 4, no. 51, pp. 629-635, 2004.
    • (2004) IEEE Transactions on Electron Devices , vol.4 , Issue.51 , pp. 629-635
    • Ogura, T.1    Ninomiya, H.2    Sugiyama, K.3    Inoue, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.