A comparative performance study of a 1200 v Si and SiC MOSFET intrinsic diode on an induction heating inverter

IEEE Transactions on Power Electronics

Volumn 29, Issue 5, 2014, Pages 2550-2562

  Jordan, Jose ^a   Esteve, Vicente ^a   Sanchis Kilders, Esteban ^a   Dede, Enrique J ^a   Maset, Enrique ^a   Ejea, Juan B ^a   Ferreres, Agustin ^a  

^a UNIVERSITY OF VALENCIA   (Spain)

Author keywords

Intrinsic diode; MOSFET; Si.; SiC

Indexed keywords

COMPARATIVE PERFORMANCE; GATE SOURCE VOLTAGE; INTRINSIC DIODE; MOS-FET; OUTPUT CHARACTERIZATION; REVERSE CHARACTERISTICS; SIC; SILICON CARBIDE MOSFETS;

DIODES; INDUCTION HEATING; MANUFACTURE; SILICON; SILICON CARBIDE;

MOSFET DEVICES;

EID: 84893139438     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2282658     Document Type: Article

References (35)

1. Q. Zhang, R. Callanan, M. K. Das, S.-H. Ryu, A. K. Agarwal, and J. W. Palmour, SiC power devices for microgrids, IEEE Trans. Power Electron., vol. 25, no. 12, pp. 2889-2896, Dec. 2010
2. R. Singh and M. Pecht, Commercial impact of silicon carbide, IEEE. Ind. Electron. Mag., vol. 2, no. 3, pp. 19-31, Sep. 2008
3. M. Bhatnagar and B. J. Baliga, Comparison of 6 H-SiC, 3 C-SiC, and Si for power devices, IEEE Trans. Electron. Devices, vol. 40, no. 3, pp. 645-655, Mar. 1993
4. R. Singh, J. A. Cooper, M. R. Melloch, T. P. Chow, and J. W. Palmour, SiC power Schottky and PiN diodes, IEEE Trans. Electron. Devices, vol. 49, no. 4, pp. 665-672, Apr. 2002
5. B. Ozpineci and L. M. Tolbert, Characterization of SiC Schottky diodes at different temperatures, IEEE Power Electron. Lett., vol. 99, no. 2, pp. 54-57, Jun. 2003
6. A. R. Hefner, R. Singh, J. Lai, D. W. Berning, S. Bouche, and C. Chapuy, SiC power diodes provide breakthrough performance for a wide range of applications, IEEE Trans. Power Electron., vol. 16, no. 2, pp. 273-280, Mar. 2001
7. G. Spiazzi, S. Buso, M. Citron, M. Corradin, and R. Pierobon, Performance evaluation of a Schottky SiC power diode in a boost PFC application, IEEE Trans. Power Electron., vol. 18, no. 6, pp. 1249-1253, Nov. 2003
8. A. Elasser, M. H. Kheraluwala, M. Ghezzo, R. L. Steigerwald, N. A. Evers, J. Kretchmer, and T. P. Chow, A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications, IEEE Trans. Ind. Appl., vol. 39, no. 4, pp. 915- 921, Jul. 2003
9. M. M. Hernando, A. Fernandez, J. Garcia, D. G. Lamar, and M. Rascon, Comparing Si and SiC diode performance in commercial AC-to-DC rectifiers with power factor correction, IEEE Trans. Ind. Electron., vol. 53, no. 2, pp. 705-707, Apr. 2006
10. A. M. Abou-Alfotouh, A. V. Radun, H. Chang, and C. Winterhalter, A 1-MHz hard-switched silicon carbide DC-DC converter, IEEE Trans. Power Electron., vol. 21, no. 4, pp. 880-889, Jul. 2006
11. M. Schweizer, T. Friedli, and J. W. Kolar, Comparison and implementation of a 3-level NPC voltage link back-to-back converter with SiC and Si diodes, in Proc. 25th Annu. IEEE Appl. Power Electron. Conf. Expo., Feb. 2010, pp. 1527-1533
12. B. Ozpineci, M. Chinthavali, A. Kashyap, L. M. Tolbert, andA.Mantooth, A 55 kW three-phase inverter with Si IGBTs and SiC Schottky diodes, IEEE Trans. Ind. Appl., vol. 45, no. 1, pp. 278-285, Jan. 2009
13. M. Chinthavali, P. Otaduy, and B. Ozpineci, Comparison of Si and SiC inverters for IPM traction drive, in Proc. IEEE Energy Convers. Congr. Expo., Sep. 2010, pp. 3360-3365
14. C. Ho, F. Canales, A. Coccia, and M. Laitinen, A circuit-level analytical study on switching behaviors of SiC diode at basic cell for power converters, in Proc. IEEE Ind. Appl. Soc. Annu. Meet., Oct. 2008, pp. 1-8
15. C. Ho, H. Breuninger, S. Pettersson, G. Escobar, L. A. Serpa, and A. Coccia, Practical design and implementation procedure of an interleaved boost converter using SiC diodes for PV applications, IEEE Trans. Power. Electron., vol. 27, no. 1, pp. 2835-2845, Jun. 2012
16. C. Ho, H. Breuninger, S. Pettersson, G. Escobar, and F. Canales, A comparative performance study of an interleaved boost converter using commercial Si and SiC diodes for PV Applications, IEEE Trans. Power. Electron., vol. 28, no. 1, pp. 289-299, Jan. 2013
17. J. Richmond, S. H. Ryu, M. Das, S. Krishnaswami, S. J. Hodge, A. Agarwal, and J. Palmour, An overview of Cree silicon carbide power devices, in Proc. Power Electron. Transportation Conf.,Oct. 2004, pp. 37-42
18. H. Zhang and L. Tolbert, Efficiency impact of SiC power electronics for modern wind turbine full scale frequency converter, IEEE Trans. Ind. Electron., vol. 58, no. 1, pp. 21-28, Jan. 2011
19. W. Wondrak, R. Held, E. Niemann, and U. Schmid, SiC devices for advanced power and high temperature applications, IEEE Trans. Ind., vol. 48, no. 2, pp. 307-308, Apr. 2001
20. H. Zhangand and L. M. Tolbert, SiCs potential impact on the design of wind generation system, in Proc. IEEE Ind. Electron. Conf., Nov. 2008, pp. 2231-2235
21. J. Biela, M. Schweizer, S. Waffler, and J. W. Kolar, SiC versus Si- Evaluation of potentials for performance improvement of inverter and DCDC converter systems by SiC power semiconductors, IEEE Trans. Ind. Electron., vol. 58, no. 7, pp. 2872-2882, Jul. 2011
22. T. Friedli, S. D. Round, D. Hassler, and J. W. Kolar, Design and performance of a 200-kHz All-SiC JFET current DC-Link back-to-back converter, IEEE Trans. Ind. Appl., vol. 45, no. 5, pp. 1868-1878, Oct. 2009
23. D. Aggeler, F. Canales, J. Biela, and J. W. Kolar, Control methods for the SiC JFET/Si MOSFET cascode, IEEE Trans. Power. Electron., vol. 28, no. 8, pp. 4074-4082, Aug. 2013
24. L. Lorenz, G. Deboy, and I. Zverev, Matched pair of CoolMOS transistor with SiC-Schottky diode advantages in application, IEEE Trans. Ind. Appl., vol. 40, no. 5, pp. 1265-1272, Oct. 2004
25. M. A. Huque, S. K. Islam, L. M. Tolbert, and B. J. Blalock, A 200 C universal gate driver integrated circuit for extreme environment applications, IEEE Trans. Power. Electron., vol. 27, no. 9, pp. 4153-4162, Sep. 2012
26. J. A. Carr, D. Hotz, J. C. Balda, H. C. Mantooth, A. Ong, and A. Agarwal, Assessing the impact of SiC MOSFETs on converter interfaces for distributed energy resources, IEEE Trans. Power. Electron., vol. 24, no. 1, pp. 260-270, Jan. 2009
27. R. A.Wood and T. E. Salem, Evaluation of a 1200-V, 800-A all-SiC dual module, IEEE Trans. Power. Electron., vol. 26, no. 9, pp. 2504-2511, Sep. 2011
28. J. Dong, R. Burgos, F.Wang, andD. Boroyevich, Temperature-dependent characteristics of SiC devices: Performance evaluation and loss calculation, IEEE Trans. Power. Electron., vol. 27, no. 2, pp. 1013-1024, Feb. 2012
29. H. Fujita, N. Uchida, and K. Ozaki, A new zone-control induction heating system using multiple inverter units applicable under mutual magnetic coupling conditions, IEEE Trans. Power Electron., vol. 26, no. 7, pp. 2009-2017, Jul. 2011
30. H. Ngoc, H. Fujita, K. Ozaki, and N. Uchida, Phase angle control of high-frequency resonant currents in a multiple inverter system for zonecontrol induction heating, IEEE Trans. Power Electron., vol. 26, no. 11, pp. 3357-3366, Nov. 2011
31. H. Pham, H. Fujita, K. Ozaki, and N. Uchida, Estimating method of heat distribution using 3-D resistance matrix for zone-control induction heating systems, IEEE Trans. Power Electron., vol. 27, no. 7, pp. 3374-3382, Jul. 2012
32. H. Sarnago, A. Mediano, and O. Lucia, High efficiency AC-AC power electronic converter applied to domestic induction heating, IEEE Trans. Power Electron., vol. 27, no. 8, pp. 3676-3684, Aug. 2012
33. J. Acero, C. Carretero, O. Luca, R. Alonso, and J. M. Burdo, Mutual impedance of small ring-type coils for multiwinding induction heating appliances, IEEE Trans. Power Electron., vol. 28, no. 2, pp. 1025-1035, Feb. 2013
34. H. Sarnago, O. Luca, A. Mediano, and J. M. Burdo, Class-D/DE dualmode- operation resonant converter for improved-efficiency domestic induction heating system, IEEE Trans. Power Electron., vol. 28, no. 3, pp. 1274-1285, Mar. 2013
35. A. Agarwal, H. Fatima, S. Haney, and S.-H. Ryu, A new degradation mechanism in high-voltage SiC power MOSFETs, IEEE Electron. Devices Lett., vol. 28, no. 7, pp. 587-589, Jul. 2007.