High Switching Performance of 1700-V, 50-A SiC Power MOSFET over Si IGBT/BiMOSFET for Advanced Power Conversion Applications

IEEE Transactions on Power Electronics

Volumn 31, Issue 7, 2016, Pages 4742-4754

  Hazra, Samir ^a   De, Ankan ^a   Cheng, Lin ^b,c,d   Palmour, John ^b   Schupbach, Marcelo ^b   Hull, Brett A ^b   Allen, Scott ^b   Bhattacharya, Subhashish ^a  

^a North Carolina State University   (United States)

^b Arkansas Power Electronics International Inc   (United States)

^c TEXAS TECH UNIVERSITY   (United States)

^d NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

1700V Si BiMOSFET; 1700V Si IGBT; 1700V SiC MOSFET; Converter efficiency; Switching characterization; Switching losses; Zero voltage switching (ZVS) turn ON

Indexed keywords

DC-DC CONVERTERS; DIODES; EFFICIENCY; ELECTRIC INVERTERS; ENERGY GAP; HVDC POWER TRANSMISSION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MOSFET DEVICES; POWER CONVERTERS; POWER MOSFET; POWER SEMICONDUCTOR DEVICES; SCHOTTKY BARRIER DIODES; SILICON; SILICON CARBIDE; SWITCHING; SWITCHING FREQUENCY; ZERO VOLTAGE SWITCHING;

1700V SI BIMOSFET; CONVERTER EFFICIENCY; SIC MOSFET; SWITCHING CHARACTERIZATION; SWITCHING LOSS;

POWER SEMICONDUCTOR DIODES;

EID: 84962338926     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2015.2432012     Document Type: Article

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