Characterization of paralleled super junction MOSFET devices under hard- and soft-switching conditions

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 4, Issue , 2001, Pages 2145-2150

  Huang, X ^a   Yu, H ^a   Lai, J S ^a   Hefner A R , Jr ^a   Berning, D W ^a  

^a VIRGINIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PARALLELED SUPER JUNCTION DEVICES;

CHOPPERS (CIRCUITS); CIRCUIT RESONANCE; ELECTRIC CONDUCTIVITY; ELECTRIC INVERTERS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; SWITCHING; THYRISTORS;

MOSFET DEVICES;

EID: 0034790364     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2001.954437     Document Type: Conference Paper

References (8)

1. Improved MOSFET
2. Characteristics and utilization of a new class of low on- resistance MOS-Gated power device
3. A delta-configured auxiliary resonant snubber inverter
4. The auxiliary quasi-resonant dc linkinverter
5. Resonant snubbers with auxiliary switches
6. Zero-voltage transition converters using inductor feedback technique
7. Design of a novel soft-switching chopper
8. Fundamentals of a new family of auxiliary resonant snubber inverters