99.3% Efficiency of three-phase inverter for motor drive using GaN-based gate injection transistors

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2011, Pages 481-484

  Morita, Tatsuo ^a   Tamura, Satoshi ^a   Anda, Yoshiharu ^a   Ishida, Masahiro ^a   Uemoto, Yasuhiro ^a   Ueda, Tetsuzo ^a   Tanaka, Tsuyoshi ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIDIRECTIONAL OPERATION; CARRIER FREQUENCY; CONVENTIONAL INVERTERS; DRIVING MOTORS; GATE DRIVING; GATE INJECTION; HIGH EFFICIENCY; MOTOR DRIVE; ON-STATE RESISTANCE; POWER SWITCHING APPLICATIONS; THREE-PHASE INVERTER;

ACTIVE FILTERS; EFFICIENCY; ELECTRIC DRIVES; FIELD EFFECT TRANSISTORS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS; SILICON CARBIDE; TRANSISTORS;

GALLIUM NITRIDE;

EID: 79955749498     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2011.5744640     Document Type: Conference Paper

References (4)

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2. Y. Uemoto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M. Yanagihara, T. Ueda, Y. Uemoto, T. Tanaka, D. Ueda, "Gate Injection Transistor (GIT) - A Normally-OFF AlGaN/GaN Power Transistor Using Conductivity Modulation," IEEE Trans. Electron Devices, vol. 54, no. 12, pp. 3393-3399, Dec. 2007.
3. 2 GaN-based Monolithic Bidirectional Switch Using Normally-off Gate Injection Transistor.", IEDM Technical Digests, pp. 865-868, December 2007.
4. Y. Uemoto, T. Morita, A. Ikoshi, H. Umeda, H. Matsuo, J. Shimizu, M. Hikita, M. Yanagihara, T. Ueda, T. Tanaka, and D. Ueda, "GaN Monolithic Inverter IC Using Normally-off Gate Injection Transistors with Planar Isolation on Si substrate.", IEDM Technical Digests, pp. 165-168, December 2009.