Assessment of off-state negative gate voltage requirements for IGBT's

IEEE Transactions on Power Electronics

Volumn 13, Issue 3, 1998, Pages 436-440

  McNeill, Neville ^a   Sheng, Kuang ^a   Williams, Barry W ^a   Finney, Stephen J ^a  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

Author keywords

IGBT gate drives; IGBT's

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC IMPEDANCE; MATHEMATICAL MODELS; THERMAL EFFECTS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

GATES (TRANSISTOR);

EID: 0032071796     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.668104     Document Type: Article

References (5)

1. Y. Jiang et al., "Soft-switching of IGBT's with the help of MOSFETS in bridge-type inverters," in IEEE PESC'93, pp. 151-157.
2. S. J. Finney et al., "IGBT turn-off characteristics and high frequency application," in IEE Colloquium Devices, Drive Circuits and Protection, Apr. 1994.
3. B. W. Williams, Power Electronics, 2nd ed. New York: MacMillan, 1992, p. 129.
4. B. J. Baliga, Modern Power Device. New York: Wiley, 1987, pp. 327-331.
5. IGBT Modules Data Book, 08.95, Siemens Semiconductors Group, Munich, Germany, 1995.