Avoiding reverse recovery effects in super junction MOSFET based half-bridges

2015 IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015

Volumn , Issue , 2015, Pages

  Conrad, Marcus ^a   Dedoncker, Rik W ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Capacitance; Current measurement; Inductance; MOSFET; Schottky diodes; Silicon carbide; Switches

Indexed keywords

CAPACITANCE; DISTRIBUTED POWER GENERATION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POWER SYSTEM INTERCONNECTION; INDUCTANCE; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS; RECOVERY; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SWITCHES;

CURRENT CONDUCTION; HIGH SWITCHING FREQUENCIES; MOS-FET; ON-STATE RESISTANCE; REVERSE RECOVERY; SCHOTTKY DIODES; THERMAL DISTRIBUTIONS; VOLTAGE AND CURRENT WAVEFORMS;

MOSFET DEVICES;

EID: 84954121756     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PEDG.2015.7223083     Document Type: Conference Paper

References (6)

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