Evaluation and application of 600 v GaN HEMT in cascode structure

IEEE Transactions on Power Electronics

Volumn 29, Issue 5, 2014, Pages 2453-2461

  Huang, Xiucheng ^a   Liu, Zhengyang ^a   Li, Qiang ^a   Lee, Fred C ^a  

^a Virginia Polytechnic Institute and State University   (United States)

Author keywords

Cascode structure; gallium nitride high electron mobility transistor (GaN HEMT); hard switching; normally on; soft switching

Indexed keywords

CASCODE STRUCTURE; GAN HEMTS; HARD-SWITCHING; HIGH FREQUENCY OPERATION; HIGH-FREQUENCY APPLICATIONS; NORMALLY ON; PARASITIC INDUCTORS; PERFORMANCE BASED;

GALLIUM NITRIDE; MOSFET DEVICES; SILICON; SOFT SWITCHING; VOLTAGE REGULATORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84893027928     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2276127     Document Type: Article

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