Gate oxide reliability issues of SiC MOSFETs under short-circuit operation

IEEE Transactions on Power Electronics

Volumn 30, Issue 5, 2015, Pages 2445-2455

  Nguyen, Thanh That ^a   Ahmed, Ashraf ^a   Thang, T V ^a   Park, Joung Hu ^a  

^a Soongsil University   (South Korea)

Author keywords

Gate leakage current; gate oxide reliability; short circuit test; SiC MOSFET

Indexed keywords

ELECTRIC FIELDS; GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; RELIABILITY; SILICON; SILICON CARBIDE; TESTING; THRESHOLD VOLTAGE;

ABNORMAL OPERATING CONDITIONS; GATE OXIDE RELIABILITY; GATE SOURCE VOLTAGE; GATE-LEAKAGE CURRENT; OPERATING CONDITION; SHORT CIRCUIT TESTS; SIC MOSFET; SILICON CARBIDE MOSFETS;

MOSFET DEVICES;

EID: 84920128427     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2014.2353417     Document Type: Article

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