Characterization of a Silicon IGBT and Silicon Carbide MOSFET Cross-switch hybrid

IEEE Transactions on Power Electronics

Volumn 30, Issue 9, 2015, Pages 4638-4642

  Rahimo, Munaf ^a   Canales, Francisco ^a   Minamisawa, Renato Amaral ^a   Papadopoulos, Charalampos ^a   Vemulapati, Umamaheswara ^a   Mihaila, Andrei ^a   Kicin, Slavo ^a   Drofenik, Uwe ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

IGBT; Silicon; Silicon Carbide

Indexed keywords

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SILICON; SILICON CARBIDE;

DYNAMIC LOSS; PARALLEL ARRANGEMENT; PARALLEL CONFIGURATION; POWER DEVICES; POWER RATINGS; REFERENCE DEVICES; SILICON CARBIDE MOSFETS; STATIC AND DYNAMIC PERFORMANCE;

MOSFET DEVICES;

EID: 84928579071     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2015.2402595     Document Type: Article

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