Performance comparison of 1200V 100A SiC MOSFET and 1200V 100A silicon IGBT

2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013

Volumn , Issue , 2013, Pages 3230-3234

  Wang, Gangyao ^a   Wang, Fei ^a   Magai, Gari ^a   Lei, Yang ^a   Huang, Alex ^a   Das, Mrinal ^b  

^a North Carolina State University   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INVERTER EFFICIENCY; LOSS MODEL; OPERATION TEMPERATURE; OUTPUT VOLTAGES; PERFORMANCE COMPARISON; SINGLE-PHASE INVERTERS; SWITCHING LOSS; SWITCHING SPEED;

COMPUTER SIMULATION; ENERGY CONVERSION; SILICON; SILICON CARBIDE;

MOSFET DEVICES;

EID: 84891072226     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2013.6647124     Document Type: Conference Paper

References (8)

1. Cree CAS100H12AM1 1200V 100A SiC MOSFET module datasheet: http://www.cree.com/power/products/sic-powermodules/ sic-modules/cas100h12am1
2. Kadavelugu, A.; Baliga, V.; Bhattacharya, S.; Das, M.; Agarwal, A.;, "Zero voltage switching performance of 1200V SiC MOSFET, 1200V silicon IGBT and 900V CoolMOS MOSFET," Energy Conversion Congress and Exposition (ECCE), 2011 IEEE, vol., no., pp.1819-1826, 17-22 Sept. 2011
3. Huang, Xing; Wang, Gangyao; Li, Yingshuang; Huang, Alex Q.; Baliga, B.Jayant, "Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection," Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE, vol., no., pp.197,200, 17-21 March 2013
4. Stevanovic, L.D.; Matocha, K.S.; Losee, P.A.; Glaser, J.S.; Nasadoski, J.J.; Arthur, S.D.;, "Recent advances in silicon carbide MOSFET power devices," Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE, vol., no., pp.401-407, 21-25 Feb. 2010
5. Honggang Sheng; Zheng Chen; Wang, F.; Millner, A.;, "Investigation of 1.2 kV SiC MOSFET for high frequency high power applications," Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE, vol., no., pp.1572-1577, 21-25 Feb. 2010
6. Kadavelugu, A.; Baek, S.; Dutta, S.; Bhattacharya, S.; Das, M.; Agarwal, A.; Scofield, J.;, "High-frequency design considerations of dual active bridge 1200 V SiC MOSFET DC-DC converter," Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE, vol., no., pp.314-320, 6-11 March 2011
7. Gangyao Wang; Huang, A.; Chushan Li, "ZVS range extension of 10A 15kV SiC MOSFET based 20kW Dual Active Half Bridge (DHB) DC-DC converter," Energy Conversion Congress and Exposition (ECCE), 2012 IEEE, vol., no., pp.1533,1539, 15-20 Sept. 2012
8. Infineon FF100R12RT4 1200V 100A Silicom IGBT module datasheet: http://www.infineon.com/cms/en/product/powermodules-discs-and-systems/ igbt-modules/igbt-modules-up-to-1200v/igbt-modules-up-to-1200vdual/ FF100R12RT4/productType.html-productType=db3a304426 e7f13b0128009c703e559d